(Hong Kong)
Product Summary
The CEB603AL is a N-channel logic level enhancement mode, field effect transistor.
Parametrics
CEB603AL maximum ratings: (1)Drain-Source Voltage VDS: 30 V; (2)Gate-Source Voltage VGS: 20 V; (3)Drain Current-Continuous @TJ=125 C-Pulsed ID: 25 A; (4)IDM: 100 A; (5)Drain-Source Diode Forward Current IS: 25 A; (6)Maximum Power Dissipation PD: 60W; (7)Operating and Storage Temperature Range TJ, TSTG: -65 to 175 ℃.
Features
CEB603AL features: (1)Super high dense cell design for extremely low RDS(ON); (2)High power and current handling capability; (3)TO-220 & TO-263 package.
Diagrams
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 CEB6030L |
Other |
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Data Sheet |
Negotiable |
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CEB6060N |
Other |
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Data Sheet |
Negotiable |
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CEB60N06G |
Other |
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Data Sheet |
Negotiable |
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CEB60N10 |
Other |
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Data Sheet |
Negotiable |
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CEB6186 |
Other |
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Data Sheet |
Negotiable |
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CEB62A3 |
Other |
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Data Sheet |
Negotiable |
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