(Hong Kong)
Product Summary
The CEP1012L is a N-channel enhancement mode field effect transistor.
Parametrics
CEP1012L absolute maximum ratings: (1)Drain-Source Voltage VDS: 120V; (2)Gate-Source Voltage VGS: ±20V; (3)Drain Current-Continuous ID: 10A; (4)Drain Current-Pulsed PD: 40A; (5)Maximum Power Dissipation @ TC = 25 C IDM: 100W; (6)Derate above 25 C IDM: 0.8W/℃; (7)Operating and Store Temperature Range TJ,Tstg: -65 to 150℃.
Features
CEP1012L features: (1)120V, 10A, RDS(ON) = 120mW @VGS = 5V; (2)Super high dense cell design for extremely low RDS(ON); (3)High power and current handing capability; (4)TO-220 & TO-263 package; (5)Lead free product is acquired.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 CEP1012L |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
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CEP1012 |
Other |
|
Data Sheet |
Negotiable |
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CEP1012L |
Other |
|
Data Sheet |
Negotiable |
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CEP10N4 |
Other |
|
Data Sheet |
Negotiable |
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CEP10N6 |
Other |
|
Data Sheet |
Negotiable |
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CEP1195 |
Other |
|
Data Sheet |
Negotiable |
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CEP125 |
Other |
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Data Sheet |
Negotiable |
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