(Hong Kong)
Product Summary
The IRFK4H450 is a 500 V, 100 mΩ HEXPAK. It is the key to International rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HEXFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness.
Parametrics
IRFK4H450 absolute maximum ratings: (1)drain-source voltage: 500 V; (2)drain-gate voltage (RGS=10k): 500 V; (3)continuous drain current: 44 A, ID @ Tc=25℃; (4)continuous drain current: 28 A, ID @ Tc=100℃; (5)pulse drain current: 165 A; (6)gate-source voltage: 20 V; (7)max. power dissipation: 500 W; (8)linear derating factor: 4 W/K; (9)inductive current, clamped: 165 A; (10)operating junction and storage temperature range: -55 to 150℃.
Features
IRFK4H450 features: (1)high current capability; (2)fast switching low drive current; (3)no second breakdown; (4)ease of paralleling; (5)electrically isolated base plate.
Diagrams
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