Product Summary

The IS41C16257-60K is 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory. Fast Page Mode allows 512 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41C16257-60K ideal for use in 16- and 32-bit wide data bus systems.

Parametrics

IS41C16257-60K maximum ratings: (1)Voltage on Any Pin Relative to GND: –1.0 to +7.0 V, –0.5 t0 +4.6; (2)Supply Voltage: –1.0 to +7.0 V, –0.5 t0 +4.6; (3)Output Current: 50 mA; (4)PD Power Dissipation: 1 W; (5)Operation Temperature: 0 to 70 ℃, –40 to +85℃; (6)Storage Temperature: –55 to +125 ℃.

Features

IS41C16257-60K features: (1)Fast access and cycle time; (2)TTL compatible inputs and outputs; (3)Refresh Interval: 512 cycles/8 ms; (4)Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden; (5)JEDEC standard pinout; (6)Byte Write and Byte Read operation via two CAS; (7)Industrial temperature available.

Diagrams

IS41C16100
IS41C16100
Other

Data Sheet
Negotiable 
IS41C16100S
IS41C16100S
Other

Data Sheet
Negotiable 
IS41C16105
IS41C16105
Other

Data Sheet
Negotiable 
IS41C16128
IS41C16128
Other

Data Sheet
Negotiable 
IS41C16256
IS41C16256
Other

Data Sheet
Negotiable 
IS41C16256C-35TLI
IS41C16256C-35TLI
ISSI
DRAM 4M, 5V, EDO DRAM 35ns, 40 pin TSOP II
Data Sheet
0-270: $2.47
270-540: $2.32
540-1080: $2.22
1080-2565: $2.15