S29PL127J70TFI130

CMOS 3.0 Volt-only, Simultaneous, Read/Write Flash Memory, TSOP, 17 mA program/erase current

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Price:: US $8.00~10.00 / piece [Get Latest Price]

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PartNumber:: S29PL127J70TFI130

Brand:: SPANSION - spansion | Pack: TSOP | D/C: 06+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
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Products Upload time: 2011-07-19

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Product Summary

The S29PL127J70TFI130 is a CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control. This S29PL127J70TFI130 can be programmed in-system or in standard EPROM programmers. A 12.0 V VPP is not required for write or erase operations. The S29PL127J70TFI130 offers fast page access times of 20 to 30 ns, with corresponding random access times of 55 to 70 ns, respectively, allowing high speed microprocessors to operate without wait states.

Parametrics

S29PL127J70TFI130 absolute maximum ratings: (1)Storage Temperature Plastic Packages:–65℃ to +150℃; (2)Ambient Temperature with Power Applied :–65℃ to +125℃; (3)Voltage with Respect to Ground: VCC:–0.5 V to +4.0 V, A9, OE#, and RESET#:–0.5 V to +13.0 V, WP#/ACC:–0.5 V to +10.5 V, All other pins:–0.5 V to VCC +0.5 V; (4)Output Short Circuit Current:200 mA.

Features

S29PL127J70TFI130 features: (1)128/128/64/32 Mbit Page Mode devices; (2)Single power supply operation; (3)Simultaneous Read/Write Operation; (4)Data can be continuously read from one bank while executing erase/program functions in another bank; (5)Zero latency switching from write to read operations; (6)FlexBank Architecture; (7)Enhanced VersatileI/OTM (VIO) Control ; (8)Up to 64 factory-locked words; (9)Up to 64 customer-lockable words; (10)Both top and bottom boot blocks in one device; (11)Manufactured on 110 nm process technology; (12)Data Retention: 20 years typical; (13)Cycling Endurance: 1 million cycles per sector typical; (14)High Performance; (15)45 mA active read current ; (16)17 mA program/erase current; (17)0.2 μA typical standby mode current.