(Hong Kong)
Product Summary
The SKM100GB123D is IGBT modules. It is featured with MOS input( voltage controlled ), N channel, homogeneous Si, low inductance case, very low tail current with low temperature dependence.
Parametrics
Absolute maximum ratings: (1)VCES: 1200V; (2)VCGR, RGE = 20 kW: 1200V; (3)IC, Tcase = 25/80℃: 100/90A; (4)ICM, Tcase = 25/80℃; tp = 1 ms: 200/180A; (5)VGES: ±20V; (6)Ptot, per IGBT, Tcase = 25℃: 690W; (7)Tj, (Tstg): – 40 to +150 (125)℃; (8)Visol, AC, 1 min: 2500V; (9)humidity, DIN 40 040: Class F; (10)climate, DIN IEC 68 T.1: 40/125/56.
Features
Features: (1)MOS input (voltage controlled); (2)N channel, Homogeneous Si; (3)Low inductance case; (4)Very low tail current with low temperature dependence; (5)High short circuit capability, self limiting to 6. Icnom; (6)Latch-up free; (7)Fast & soft inverse CAL diodes8); (8)Isolated copper baseplate using DCB Direct Copper Bonding Technology; (9)Large clearance (10 mm) and creepage distances (20 mm).
Diagrams
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 SKM100GAL123D |
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SKM100GB124D |
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SKM100GB125DN |
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SKM100GB173D |
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SKM111AR |
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SKM121AR |
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Negotiable |
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