(Hong Kong)
Product Summary
The mg100j6es52 is a TOSHIBA GTR module N channel IGBT. It has high power switching applications and motor control applications.
Parametrics
mg100j6es52 maximum ratings: (1)Collector emitter voltage VCES: 600V; (2)Gate emitter voltage VGES: ±20V; (3)Collector current DC, IC: 100A; (4)Collector current 1ms, ICP: 200A; (5)Forward current DC, IF: 100A; (6)Forward current 1ms IFM: 200A; (7)Collector power dissipation, PC: 450W; (8)Junction temperature Tj: 150℃; (9)Storage temperature range Tstg: -40 to 125℃.
Features
mg100j6es52 features: (1)The electctrodes are isolated from case; (2)High input impedance; (3)6 IGBTa build into 1 package; (4)Enhancement mode; (5)High speed; (6)Low saturation voltage.
Diagrams
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 MG1000E |
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MG1001 |
Other |
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MG1001E |
Other |
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Negotiable |
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MG1002E |
Other |
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Negotiable |
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MG1004 |
Other |
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Negotiable |
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MG1004E |
Other |
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Negotiable |
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