(Hong Kong)
Product Summary
The 2N6341 is a high power NPN silicon transistors which is designed for the use in industrial power amplifiers and swithching circuit applications.
Parametrics
Absolute maximum ratings:(1)Collector to base voltage, VCBO: 180V; (2)Collector to emitter voltage, VCEO: 150V; (3)Emitter to base voltage, VEBO: 6V; (4)Collector current, at continuous condition, IC: 25 A; (5)Collector current, at peak condition, IC: 50A; (6)Base current, IB: 10A; (7)Total Power Dissipation Tc=25℃, PD: 200W; (8)Total Power Dissipation derate above 25℃, PD: 1.14W/℃; (9)operation and storage junction tempreture range, Tj, Tstg: -65 to +200℃.
Features
Features: (1)high DC current gain, Hfe=30-120 at Ic=10A=12(min) at Ic=25A; (2)low collector-emitter saturation voltage, Vce(SAT)=1.0V(MAX) at Ic=10A, Ib=1.0A; (3)complement to 2N6436-38.
Diagrams
| Image | Part No | Mfg | Description |  |
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 2N6341 |
ON Semiconductor |
Transistors Bipolar (BJT) 25A 150V 200W NPN |
Data Sheet |
Negotiable |
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2N6341G |
ON Semiconductor |
Transistors Bipolar (BJT) 25A 150V 200W NPN |
Data Sheet |
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