Product Summary

The BSM100GB60DLC is a IGBT Module.

Parametrics

BSM100GB60DLC maximum ratings: (1)Kollektor-Emitter-Sperrspannung collector-emitter voltage VCES: 600 V; (2)Kollektor-Dauergleichstrom Tc= 70℃ IC,nom: 100 A; (3)DC-collector current Tc= 25℃ IC: 130 A; (4)Periodischer Kollektor Spitzenstrom repetitive peak collector current tP= 1ms, Tc= 70℃ ICRM: 200 A; (5)Gesamt-Verlustleistung total power dissipation Tc= 25℃, Transistor Ptot: 445 W; (6)Gate-Emitter-Spitzenspannung gate-emitter peak voltage VGES: +/- 20V V; (7)Dauergleichstrom DC forward current IF: 100 A; (8)Periodischer Spitzenstrom repetitive peak forw. current tP= 1ms IFRM: 200 A; (9)Grenzlastintegral der Diode I2t - value, Diode VR= 0V, tp= 10ms, Tvj= 125℃ I2t: 1.250 A2s; (10)Isolations-Prüfspannung insulation test voltage RMS, f= 50Hz, t= 1min VISOL: 2,5 kV.

Features

BSM100GB60DLC features: (1)Kollektor-Emitter IC= 100A, VGE= 15V, Tvj= 25℃ VCE sat: 1,95V typ 2,45 V max; (2)collector-emitter saturation voltage IC= 100A, VGE= 15V, Tvj= 125℃ VCE sat: 2,20 V; (3)Gate-Schwellenspannung gate threshold voltage IC= 1,5mA, VCE= VGE, Tvj= 25℃ 4,5 to 6,5 V 5,5 V typ; (4)Kollektor-Emitter Reststrom VCE= 600V, VGE= 0V, Tvj= 25℃ ICES: 1μA typ 500 μA max; (5)collector-emitter cut-off current VCE= 600V, VGE= 0V, Tvj= 125℃: 1mA; (6)Gate-Emitter Reststrom gate-emitter leakage current VCE= 0V, VGE= 20V, Tvj= 25℃ IGES: 400 nA.

Diagrams

BSM100GB60DLC Circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
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BSM100GB60DLC
BSM100GB60DLC

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