(Hong Kong)
Product Summary
The BSS123 is a SIPMOS Small-Signal-Transistor.
Parametrics
BSS123 absolute maximum ratings: (1)Continuous drain current: TA=25℃: 0.17A, TA=70℃:0.14A; (2)Pulsed drain current, TA=25℃:0.68A; (3)Reverse diode dv/dt, IS=0.17A, VDS=80V, di/dt=200A/μs, Tjmax=150℃: 6 kV/μs; (4)Gate source voltage:±20V; (5)Power dissipation, TA=25℃:0.36 W; (6)Operating and storage temperature: -55℃ to +150℃; (7)IEC climatic category; DIN IEC 68-1:55/150/56.
Features
BSS123 features: (1)N-Channel; (2)Enhancement mode; (3)Logic Level; (4)dv/dt rated.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 BSS123 H6327 |
Infineon Technologies |
MOSFET CHIPLIEFERUNGEN |
Data Sheet |
Negotiable |
|
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 |
BSS123 L6327 |
Infineon Technologies |
MOSFET N-CH 100V 0.17A |
Data Sheet |
|
|
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|
BSS123 L6433 |
Infineon Technologies |
MOSFET SIPMOS Sm-Signal Transistor 100V .17A |
Data Sheet |
|
|
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|
BSS123 L7874 |
Infineon Technologies |
MOSFET SIPMOS Sm-Signal Transistor 100V .17A |
Data Sheet |
Negotiable |
|
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|
BSS123(Z) |
Other |
|
Data Sheet |
Negotiable |
|
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 |
BSS123,215 |
NXP Semiconductors |
MOSFET N-CH TRNCH 100V .15A |
Data Sheet |
|
|
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|
BSS123_D87Z |
Fairchild Semiconductor |
MOSFET |
Data Sheet |
Negotiable |
|
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|
BSS123_Q |
Fairchild Semiconductor |
MOSFET SOT-23 N-CH LOGIC |
Data Sheet |
Negotiable |
|
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