Product Summary
FDS8926A N-Channel enhancement mode power field effect transistor is produced using Fairchild proprietary, high cell density, DMOS technology. This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance. The FDS8926A is particularly suited for low voltage applications such as disk drive motor control, battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Parametrics
FDS8926A absolute maximum ratings: (1)VDSS Drain-Source Voltage: 30 V; (2)VGSS Gate-Source Voltage: ±8 V; (3)ID Drain Current Continuous: 5.5 A; Pulsed: 20A; (4)PD Power Dissipation for Dual Operation: 2 W; (5)TJ,TSTG Operating and Storage Temperature Range: -55 to 150℃.
Features
FDS8926A features: (1)5.5 A, 30 V. RDS(ON)=0.030 Ω @ VGS=4.5 V; RDS(ON)= 0.038 Ω @ VGS=2.5 V; (2)High density cell design for extremely low RDS(ON); (3)Combines low gate threshold (fully enhanced at 2.5V) with; (4)high breakdown voltage of 30 V; (5)High power and current handling capability in a widely; (6)used surface mount package; (7)Dual MOSFET in surface mount package.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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FDS8926A |
Fairchild Semiconductor |
MOSFET SO-8 DUAL N-CH 30V |
Data Sheet |
Negotiable |
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FDS8333C |
Fairchild Semiconductor |
MOSFET N & PCh PowerTrench 3V |
Data Sheet |
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FDS8333C_Q |
Fairchild Semiconductor |
MOSFET N & PCh PowerTrench 3V |
Data Sheet |
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FDS8433A |
Fairchild Semiconductor |
MOSFET SO-8 SGL P-CH -20V |
Data Sheet |
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FDS8447 |
Fairchild Semiconductor |
MOSFET 40V Single N-Channel PowerTrench MOSFET |
Data Sheet |
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FDS8449 |
Fairchild Semiconductor |
MOSFET 40V N-Ch UltraFET PowerTrench |
Data Sheet |
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FDS8449_F085 |
Fairchild Semiconductor |
MOSFET 40V N-Channel PowerTrench |
Data Sheet |
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