Product Summary
MTP3055V is a new technology designed to achieve an on resistance area product about one half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E FET designs, MTP3055V is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
Parametrics
MTP3055V absolute maximum ratings: (1)Drain–Source Voltage VDSS 60 Vdc; (2)Drain–Gate Voltage (RGS = 1.0 MΩ ) VDGR 60 Vdc; (3)Gate–Source Voltage-Continuous, VGS: ± 20Vdc; (4)Gate–Source Voltage-Non–Repetitive (tp ≤ 10 ms), VGSM: ±25Vpk; (5)Total Power Dissipation @ 25℃ , PD: 48Watts; Derate above 25℃ : 0.32W/℃ ; (6)Operating and Storage Temperature Range, TJ, Tstg – 55 to 175℃ ; (7)Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25℃ , EAS: 72 mJ; (8)Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds, TL: 260 ℃ .
Features
MTP3055V features: (1)On–resistance Area Product about One–half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology; (2)Faster Switching than E–FET Predecessors; (3)Avalanche Energy Specified; (4)IDSS and VDS(on) Specified at Elevated Temperature; (5)Static Parameters are the Same for both TMOS V and ; (6)TMOS E–FET.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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MTP3055V |
Fairchild Semiconductor |
MOSFET N-Channel FET Enhancement Mode |
Data Sheet |
Negotiable |
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MTP3055V_L86Z |
Fairchild Semiconductor |
MOSFET TO-220 |
Data Sheet |
Negotiable |
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MTP3055VL |
Fairchild Semiconductor |
MOSFET 60V Single N-Ch |
Data Sheet |
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MTP3055VL_Q |
Fairchild Semiconductor |
MOSFET 60V Single N-Ch |
Data Sheet |
Negotiable |
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