(Hong Kong)
Product Summary
The CEP05P03 is a single P-channel enhancement mode MOSFET.
Parametrics
CEP05P03 maximum ratings: (1)Drain source voltage, VDS: -30V; (2)Gate-source voltage, VGS: ±20V; (3)Drain gurrent continuous @ TJ=125℃ ID: ±4.9A, IDM: ±30A; (4)Drain source diode forward current, ID: 50W; (5)Operating junction and storage temperature range, TJ, TSTG: -55 to 150℃.
Features
CEP05P03 features: (1)-30V, -4.9A, RDS(ON)=70mΩ @ VGS=-10V, RDS(ON)=120mΩ @ VGS=-4.5V; (2)Super high dense cell design for extremely low RDS(ON); (3)High power and current handling capability; (4)TO-220 package for through hole.
Diagrams
| Image | Part No | Mfg | Description |  |
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 CEP05P03 |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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CEP02N6A |
Other |
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Data Sheet |
Negotiable |
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CEP02N6G |
Other |
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Data Sheet |
Negotiable |
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CEP02N7 |
Other |
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Data Sheet |
Negotiable |
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CEP02N7G |
Other |
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Data Sheet |
Negotiable |
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CEP04N7G |
Other |
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Data Sheet |
Negotiable |
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CEP05N65 |
Other |
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Data Sheet |
Negotiable |
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