Product Summary

The SD1732 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class A operation in UHF and Band IV, V television transmitters and transposers.

Parametrics

SD1732 absolute maximum ratings: (1)Collector-Base Voltage:45 V; (2)Collector-Emitter Voltage:25 V; (3)Emitter-Base Voltage:4.0 V; (4)Device Current:2 x 2.6 A; (5)Power Dissipation:65 W; (6)Junction Temperature:+200℃; (7)Storage Temperature:-65℃ to +150℃.

Features

SD1732 features: (1)470 to 860 MHz; (2)25 Volts; (3)class a push pull; (4)designed for high power linear operation; (5)high saturated power capability; (6)gold metallization; (7)diffused emitter ballast resistors; (8)common emitter configuration; (9)internal input matching; (10)POUT = 14.0 W min. with 8.5 dB gain.

Diagrams

SD1732 test circuit

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
SD1732
SD1732

STMicroelectronics

Transistors RF Bipolar Power NPN 25V 470-860MHz

Data Sheet

Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
SD1726
SD1726

STMicroelectronics

Transistors RF Bipolar Power NPN 50V 30MHz

Data Sheet

0-36: $53.42
36-100: $49.87
SD1728
SD1728

STMicroelectronics

Transistors RF Bipolar Power NPN 50V 30MHz

Data Sheet

0-1: $73.16
1-10: $68.65
10-100: $66.17
SD1731
SD1731

STMicroelectronics

Transistors RF Bipolar Power NPN 50V 30MHz

Data Sheet

Negotiable 
SD1732
SD1732

STMicroelectronics

Transistors RF Bipolar Power NPN 25V 470-860MHz

Data Sheet

Negotiable 
SD1730
SD1730

STMicroelectronics

Transistors RF Bipolar Power NPN 28V 30MHz

Data Sheet

Negotiable 
SD1727
SD1727

STMicroelectronics

Transistors RF Bipolar Power NPN 50V 30MHz

Data Sheet

Negotiable