Product Summary
The CEP60N10 is a N-channel enhancement mode field effect transistor.
Parametrics
CEP60N10 absolute maximum ratings: (1)Drain-Source Voltage VDS: 100V; (2)Gate-Source Voltage VGS: ±20V; (3)Drain Current-Continuous ID: 60 V; (4)Drain Current-Pulsed PD IDM: 240 A; (5)Maximum Power Dissipation @ TC = 25 C PD: 200A; (6)Derate above 25 C PD:1.3W/℃; (7)Single Pulsed Avalanche Energy EAS: 148mJ; (8)Single Pulsed Avalanche Current IAS: 46A; (9)Operating and Store Temperature Range TJ,Tstg: -55 to 175℃.
Features
CEP60N10 features: (1)100V, 60A, RDS(ON) = 23.5mW @VGS = 10V; (2)Super high dense cell design for extremely low RDS(ON); (3)High power and current handing capability; (4)TO-220 & TO-263 package; (5)Lead free product is acquired.
Diagrams
Image | Part No | Mfg | Description | ![]() |
Pricing (USD) |
Quantity | ||||
---|---|---|---|---|---|---|---|---|---|---|
![]() |
![]() CEP60N10 |
![]() Other |
![]() |
![]() Data Sheet |
![]() Negotiable |
|
||||
Image | Part No | Mfg | Description | ![]() |
Pricing (USD) |
Quantity | ||||
![]() |
![]() CEP6060N |
![]() Other |
![]() |
![]() Data Sheet |
![]() Negotiable |
|
||||
![]() |
![]() CEP6060R |
![]() Other |
![]() |
![]() Data Sheet |
![]() Negotiable |
|
||||
![]() |
![]() CEP60N06G |
![]() Other |
![]() |
![]() Data Sheet |
![]() Negotiable |
|
||||
![]() |
![]() CEP60N10 |
![]() Other |
![]() |
![]() Data Sheet |
![]() Negotiable |
|
||||
![]() |
![]() CEP6186 |
![]() Other |
![]() |
![]() Data Sheet |
![]() Negotiable |
|
||||
![]() |
![]() CEP62A2 |
![]() Other |
![]() |
![]() Data Sheet |
![]() Negotiable |
|